MATERIAL FOR FORMING SILICON-CONTAINING FILM, AND SILICON-CONTAINING INSULATING FILM AND METHOD FOR FORMING THE SAME
A silicon-containing film-forming material includes at least one organosilane compound shown by the following general formula (1). wherein R 1 to R 6 individually represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a vinyl group, a phenyl group, a halogen atom, a hydroxyl group, an...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | A silicon-containing film-forming material includes at least one organosilane compound shown by the following general formula (1).
wherein R 1 to R 6 individually represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a vinyl group, a phenyl group, a halogen atom, a hydroxyl group, an acetoxy group, a phenoxy group, or an alkoxy group, provided that at least one of R 1 to R 6 represents a halogen atom, a hydroxyl group, an acetoxy group, a phenoxy group, or an alkoxy group, and n represents an integer from 0 to 3. |
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