MATERIAL FOR FORMING SILICON-CONTAINING FILM, AND SILICON-CONTAINING INSULATING FILM AND METHOD FOR FORMING THE SAME

A silicon-containing film-forming material includes at least one organosilane compound shown by the following general formula (1). wherein R 1 to R 6 individually represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a vinyl group, a phenyl group, a halogen atom, a hydroxyl group, an...

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Hauptverfasser: KATOU, HITOSHI, KOKUBO, TERUKAZU, NAKAGAWA, HISASHI, NOBE, YOUHEI, ISHIZUKI, KENJI
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:A silicon-containing film-forming material includes at least one organosilane compound shown by the following general formula (1). wherein R 1 to R 6 individually represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a vinyl group, a phenyl group, a halogen atom, a hydroxyl group, an acetoxy group, a phenoxy group, or an alkoxy group, provided that at least one of R 1 to R 6 represents a halogen atom, a hydroxyl group, an acetoxy group, a phenoxy group, or an alkoxy group, and n represents an integer from 0 to 3.