APPARATUS FOR GAS HANDLING IN VACUUM PROCESSES

In an apparatus for controlling a gas-rise pattern in a vacuum treatment process a gas inlet ( 1 ) is operatively connected with a mass-flow-controller MFC ( 2 ); said MFC ( 2 ) being again operatively connected via a first valve ( 5 ) with a vacuum chamber ( 3 ) and in parallel via second valve ( 6...

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Bibliographische Detailangaben
1. Verfasser:	RATTUNDE, OLIVER
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	In an apparatus for controlling a gas-rise pattern in a vacuum treatment process a gas inlet ( 1 ) is operatively connected with a mass-flow-controller MFC ( 2 ); said MFC ( 2 ) being again operatively connected via a first valve ( 5 ) with a vacuum chamber ( 3 ) and in parallel via second valve ( 6 ) with a vent-line ( 4 ). Said connection with the vent-line ( 4 ) further comprises means for varying the pump cross section of said vent-line ( 4 ). In another embodiment the apparatus for controlling a gas-rise pattern in a vacuum treatment process comprises a gas inlet ( 13 ) operatively connected with a vacuum chamber ( 3 ) via a valve ( 11 ), wherein the connection between gas inlet ( 13 ) and valve ( 11 ) further comprises a diaphragm ( 12 ).