VACUUM PROCESSING METHOD AND VACUUM PROCESSING APPARATUS

A vacuum treatment method and a vacuum treatment apparatus are provided in which the SiH 2 /SiH ratio does not increase even when the deposition rate is increased, thereby deterioration in the film quality is prevented and a high level of productivity can be achieved. A vacuum treatment method compr...

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Bibliographische Detailangaben
Hauptverfasser:	MIYAHARA, HIROOMI, NISHIMIYA, TATSUYUKI
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	A vacuum treatment method and a vacuum treatment apparatus are provided in which the SiH 2 /SiH ratio does not increase even when the deposition rate is increased, thereby deterioration in the film quality is prevented and a high level of productivity can be achieved. A vacuum treatment method comprising the steps of heating a substrate (8) disposed inside a deposition chamber (6) under a reduced pressure atmosphere using a heat spreader (a heating device) (5), and supplying electric power to a discharge electrode (3) disposed in a position facing the substrate (8), thereby conducting a deposition on the substrate (8), wherein the deposition is conducted in a state where the temperature difference between the substrate (8) and the discharge electrode (3) is not more than 30°C. The deposition may also be conducted with the gap between the substrate (8) and the discharge electrode (3) set to not more than 7.5 mm.