Optical switch device

The device has a substrate (10) made of a semiconductor material e.g. silicon, and a metallic layer (20) including lower and upper barrier layers and arranged on the substrate. The metallic layer is formed with a preset height (h) so that plasmons are formed by impingement of electromagnetic radiati...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser:	BLOEHBAUM, FRANK
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	The device has a substrate (10) made of a semiconductor material e.g. silicon, and a metallic layer (20) including lower and upper barrier layers and arranged on the substrate. The metallic layer is formed with a preset height (h) so that plasmons are formed by impingement of electromagnetic radiation (S) on the metallic layer. A modifying unit modifies charge carrier concentration of the semiconductor material, by production of electric fields inside the substrate, or by an avalanche effect after application of voltage to the substrate.