Power transducer

An object of the present invention is to improve the performance of a power transducer while efficiently using the power semiconductor also by managing the permissible duty factor of the power semiconductor in the regenerative braking circuit provided in the power transducer. To attain the above-men...

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Bibliographische Detailangaben
Hauptverfasser:	Uchino, Yoshihiro, Watanabe, Hiroshi, Ibori, Satoshi, Hiraga, Masahiro
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORSOR DYNAMO-ELECTRIC CONVERTERS CONTROL OR REGULATION THEREOF CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC EQUIPMENT OR PROPULSION OF ELECTRICALLY-PROPELLEDVEHICLES ELECTRICITY ELECTRODYNAMIC BRAKE SYSTEMS FOR VEHICLES, IN GENERAL GENERATION MAGNETIC SUSPENSION OR LEVITATION FOR VEHICLES PERFORMING OPERATIONS TRANSPORTING VEHICLES IN GENERAL
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Beschreibung
Zusammenfassung:	An object of the present invention is to improve the performance of a power transducer while efficiently using the power semiconductor also by managing the permissible duty factor of the power semiconductor in the regenerative braking circuit provided in the power transducer. To attain the above-mentioned object, the user is allowed to set, through an operation panel provided on the power transducer, the resistance value of the regenerative braking resistor for thermally consuming the rotational energy generated during motor deceleration. The power transducer performs the steps of: calculating the current which flows in the regenerative braking circuit from the resistance value setting; obtaining the generation loss of the power semiconductor in the regenerative braking circuit with the calculated current value; and determining the permissible duty factor of the power semiconductor from the obtained generation loss.