Diode with stress reducing means
The component has lead-free high-temperature resistant extensive connections (4, 5) that are formed between a semiconductor chip (3) and parts (1, 6) of the component. The semiconductor chip is a silicon semiconductor chip and parts are copper parts. The connections are formed as low-temperature con...
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | The component has lead-free high-temperature resistant extensive connections (4, 5) that are formed between a semiconductor chip (3) and parts (1, 6) of the component. The semiconductor chip is a silicon semiconductor chip and parts are copper parts. The connections are formed as low-temperature connection layers that are formed using low-temperature connection technique. Silicon carbide and gallium nitrides are utilizable as semiconductor chip. The layers are formed within silicon surfaces of the chip. |
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