Trench MOSFET

A trench-gated transistor is provided which is formed in a semiconductor die. The transistor comprises an arrangement of annular trenches, each of said trenches being separated from an adjacent trench by an annular mesa; and a source metal layer (224) and a gate metal layer (524), said gate metal la...

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Bibliographische Detailangaben
Hauptverfasser:	TERRILL, KYLE, SHI, SHARON, CHEN, KUO-IN, PATTANAYAK, DEVA, N, LUI, KAM HONG, XU, ROBERT, BAI, YUMING, YUE, CHRISTINA
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A trench-gated transistor is provided which is formed in a semiconductor die. The transistor comprises an arrangement of annular trenches, each of said trenches being separated from an adjacent trench by an annular mesa; and a source metal layer (224) and a gate metal layer (524), said gate metal layer (524) comprising a plurality of gate metal legs that extend radially outward from a central area toward a perimeter of said die, said source metal layer (224) comprising a plurality of sections located between said gate metal legs.