Ag-based sputtering target

Disclosed is an Ag-based sputtering target composed of pure Ag or Ag alloy wherein when the average grain size d ave of the sputtering face of the Ag-based sputtering target is measured in accordance with the procedures 1-3 described below, the average grain size d ave satisfies 10 µm or less. (Proc...

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Bibliographische Detailangaben
1. Verfasser:	MATSUZAKI, HITOSHI
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ALLOYS CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS ANDNON-FERROUS ALLOYS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:	Disclosed is an Ag-based sputtering target composed of pure Ag or Ag alloy wherein when the average grain size d ave of the sputtering face of the Ag-based sputtering target is measured in accordance with the procedures 1-3 described below, the average grain size d ave satisfies 10 µm or less. (Procedure 1) In the surface of the sputtering face, a plurality of locations are optionally selected, and a micrograph (magnification: 40-2,000 times) of each selected location is taken. (Procedure 2) Four or more straight lines are drawn in a grid pattern or radially on each micrograph, a number n of grain boundaries existing on the straight line is investigated, and a grain size d is calculated on the basis of the following equation on each straight line. d = L / n / m where, L represents the length of the straight line, n represents the number of the grain boundaries existing on the straight line, and m represents the magnification of the micrograph. (Procedure 3) The average value of the grain sizes d of all selected locations is made the average grain size d ave of the sputtering face.