Field-effect transistor and method for producing a field-effect transistor

Field-effect transistor and method for producing a field-effect transistor

A semiconductor body (10) comprises a field-effect transistor (11). The field-effect transistor (11) comprises a drain region (12) of a first conductivity type, a source region (13) of the first conductivity type, a drift region (16) and a channel region (14) of a second conductivity type which is o...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Park, Jong Mun, Minixhofer, Rainer, Vescoli, Verena
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor body (10) comprises a field-effect transistor (11). The field-effect transistor (11) comprises a drain region (12) of a first conductivity type, a source region (13) of the first conductivity type, a drift region (16) and a channel region (14) of a second conductivity type which is opposite to the first conductivity type. The drift region (16) comprises at least two stripes (15,32) of the first conductivity type which extend from the drain region (12) in a direction towards the source region (13). The channel region (14) is arranged between the drift region (16) and the source region (13).