Interpenetrating network for chemical mechanical polishing
Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer (202,302,402) comprising an interpenetrating network including a continuous non-fugitive phase (207,307,407) and a substantially co-continuous fugitive phase (205,305,405). Also pro...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer (202,302,402) comprising an interpenetrating network including a continuous non-fugitive phase (207,307,407) and a substantially co-continuous fugitive phase (205,305,405). Also provided are methods of making the chemical mechanical polishing pads and for using them to polish substrates. |
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