Interpenetrating network for chemical mechanical polishing

Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer (202,302,402) comprising an interpenetrating network including a continuous non-fugitive phase (207,307,407) and a substantially co-continuous fugitive phase (205,305,405). Also pro...

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Bibliographische Detailangaben
1. Verfasser: MULDOWNEY, GREGORY P
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer (202,302,402) comprising an interpenetrating network including a continuous non-fugitive phase (207,307,407) and a substantially co-continuous fugitive phase (205,305,405). Also provided are methods of making the chemical mechanical polishing pads and for using them to polish substrates.