Method for etching using advanced patterning film in capacitive coupling high frequency plasma dielectric etch chamber
A method for etching wafers using advanced patterning film (APF) to reduce bowing and improve bottom-to-top ratios includes providing a wafer having an APF layer into a processing chamber, wherein the processing chamber is configured with a power source operating at about 162 MHz, supplying a proces...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | A method for etching wafers using advanced patterning film (APF) to reduce bowing and improve bottom-to-top ratios includes providing a wafer having an APF layer into a processing chamber, wherein the processing chamber is configured with a power source operating at about 162 MHz, supplying a process gas into the chamber, applying a source power using the 162 MHz power source, and applying a bias power to the wafer. The process gas comprises hydrogen gas (H2), nitrogen gas (N2), and carbon monoxide gas (CO). The ratio of H2: N2 is about 1:1. Additionally, the wafer temperature is adjusted to improve the etching characteristics. |
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