PHOTOELECTRIC CONVERTER DEVICE AND PROCESS FOR PRODUCING THE SAME

A photovoltaic device with improved cell properties having a photovoltaic layer comprising microcrystalline silicon-germanium, and a process for producing the device. A buffer layer comprising microcrystalline silicon or microcrystalline silicon-germanium, and having a specific Raman peak ratio is p...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: GOYA, SANEYUKI, SAKAI, SATOSHI, SATAKE, KOUJI
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator GOYA, SANEYUKI
SAKAI, SATOSHI
SATAKE, KOUJI
description A photovoltaic device with improved cell properties having a photovoltaic layer comprising microcrystalline silicon-germanium, and a process for producing the device. A buffer layer comprising microcrystalline silicon or microcrystalline silicon-germanium, and having a specific Raman peak ratio is provided between a substrate-side impurity-doped layer and an i-layer comprising microcrystalline silicon-germanium.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2003700A9</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2003700A9</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2003700A93</originalsourceid><addsrcrecordid>eNrjZHAM8PAP8Xf1cXUOCfJ0VnD29wtzDQpxDVJwcQ3zdHZVcPRzUQgI8nd2DQ5WcPMPArFdQp09_dwVQjxcFYIdfV15GFjTEnOKU3mhNDeDgptriLOHbmpBfnxqcUFicmpeakm8a4CRgYGxuYGBo6UxEUoAjjcqgA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PHOTOELECTRIC CONVERTER DEVICE AND PROCESS FOR PRODUCING THE SAME</title><source>esp@cenet</source><creator>GOYA, SANEYUKI ; SAKAI, SATOSHI ; SATAKE, KOUJI</creator><creatorcontrib>GOYA, SANEYUKI ; SAKAI, SATOSHI ; SATAKE, KOUJI</creatorcontrib><description>A photovoltaic device with improved cell properties having a photovoltaic layer comprising microcrystalline silicon-germanium, and a process for producing the device. A buffer layer comprising microcrystalline silicon or microcrystalline silicon-germanium, and having a specific Raman peak ratio is provided between a substrate-side impurity-doped layer and an i-layer comprising microcrystalline silicon-germanium.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20090506&amp;DB=EPODOC&amp;CC=EP&amp;NR=2003700A9$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25565,76548</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20090506&amp;DB=EPODOC&amp;CC=EP&amp;NR=2003700A9$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GOYA, SANEYUKI</creatorcontrib><creatorcontrib>SAKAI, SATOSHI</creatorcontrib><creatorcontrib>SATAKE, KOUJI</creatorcontrib><title>PHOTOELECTRIC CONVERTER DEVICE AND PROCESS FOR PRODUCING THE SAME</title><description>A photovoltaic device with improved cell properties having a photovoltaic layer comprising microcrystalline silicon-germanium, and a process for producing the device. A buffer layer comprising microcrystalline silicon or microcrystalline silicon-germanium, and having a specific Raman peak ratio is provided between a substrate-side impurity-doped layer and an i-layer comprising microcrystalline silicon-germanium.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAM8PAP8Xf1cXUOCfJ0VnD29wtzDQpxDVJwcQ3zdHZVcPRzUQgI8nd2DQ5WcPMPArFdQp09_dwVQjxcFYIdfV15GFjTEnOKU3mhNDeDgptriLOHbmpBfnxqcUFicmpeakm8a4CRgYGxuYGBo6UxEUoAjjcqgA</recordid><startdate>20090506</startdate><enddate>20090506</enddate><creator>GOYA, SANEYUKI</creator><creator>SAKAI, SATOSHI</creator><creator>SATAKE, KOUJI</creator><scope>EVB</scope></search><sort><creationdate>20090506</creationdate><title>PHOTOELECTRIC CONVERTER DEVICE AND PROCESS FOR PRODUCING THE SAME</title><author>GOYA, SANEYUKI ; SAKAI, SATOSHI ; SATAKE, KOUJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2003700A93</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2009</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>GOYA, SANEYUKI</creatorcontrib><creatorcontrib>SAKAI, SATOSHI</creatorcontrib><creatorcontrib>SATAKE, KOUJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GOYA, SANEYUKI</au><au>SAKAI, SATOSHI</au><au>SATAKE, KOUJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PHOTOELECTRIC CONVERTER DEVICE AND PROCESS FOR PRODUCING THE SAME</title><date>2009-05-06</date><risdate>2009</risdate><abstract>A photovoltaic device with improved cell properties having a photovoltaic layer comprising microcrystalline silicon-germanium, and a process for producing the device. A buffer layer comprising microcrystalline silicon or microcrystalline silicon-germanium, and having a specific Raman peak ratio is provided between a substrate-side impurity-doped layer and an i-layer comprising microcrystalline silicon-germanium.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; fre ; ger
recordid cdi_epo_espacenet_EP2003700A9
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PHOTOELECTRIC CONVERTER DEVICE AND PROCESS FOR PRODUCING THE SAME
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T15%3A11%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=GOYA,%20SANEYUKI&rft.date=2009-05-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP2003700A9%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true