PHOTOELECTRIC CONVERTER DEVICE AND PROCESS FOR PRODUCING THE SAME

A photovoltaic device with improved cell properties having a photovoltaic layer comprising microcrystalline silicon-germanium, and a process for producing the device. A buffer layer comprising microcrystalline silicon or microcrystalline silicon-germanium, and having a specific Raman peak ratio is p...

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Bibliographische Detailangaben
Hauptverfasser: GOYA, SANEYUKI, SAKAI, SATOSHI, SATAKE, KOUJI
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:A photovoltaic device with improved cell properties having a photovoltaic layer comprising microcrystalline silicon-germanium, and a process for producing the device. A buffer layer comprising microcrystalline silicon or microcrystalline silicon-germanium, and having a specific Raman peak ratio is provided between a substrate-side impurity-doped layer and an i-layer comprising microcrystalline silicon-germanium.