Semiconductor light emitting apparatus

A light emitting apparatus with a combination of a plurality of LED chips (102) and a phosphor layer (103) is provided to significantly reduce variations in chromaticity and luminance. The plurality of semiconductor light emitting devices (LED chips 102) are disposed with a gap (L) therebetween, and...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Akagi, Tsutomu, Harada, Mitsunori, Ajiki, Shuichi, Kawakami, Yasuyuki
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS BLASTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY HEATING LIGHT SOURCES NOT OTHERWISE PROVIDED FOR LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATINGELEMENTS LIGHTING MECHANICAL ENGINEERING NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE SEMICONDUCTOR DEVICES WEAPONS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A light emitting apparatus with a combination of a plurality of LED chips (102) and a phosphor layer (103) is provided to significantly reduce variations in chromaticity and luminance. The plurality of semiconductor light emitting devices (LED chips 102) are disposed with a gap (L) therebetween, and the phosphor layer (103) is formed on the upper surface thereof to bridge over the gaps between the LED chips (102). The phosphor layer (103) may be uniform in thickness, but preferably less in thickness over the gaps between the LED chips (102) than on the upper surface of the LED chips (102). The phosphor layer (103) is continuously formed on the upper surface of the array of the chips (102) with no phosphor layer (103) present in between the chips (102). This allows for reducing variations in luminance and chromaticity which may result from the gaps or the phosphor layer (103) present in between the gaps.