Methods to eliminate m-shape etch rate profile in inductively coupled plasma reactor
An inductively-coupled plasma processing chamber (102) has a chamber with a ceiling (106). A first (148) and second (150) antenna are placed adjacent to the ceiling. The first antenna is concentric to the second antenna. A plasma source power supply (132) is coupled to the first and second antenna....
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creator | LEE, KYEONG-TAE TODOROV, VALENTIN N KIM, TAE WON KHAN, ANISUL DESHMUKH, SHASHANK YUEN, STEPHEN |
description | An inductively-coupled plasma processing chamber (102) has a chamber with a ceiling (106). A first (148) and second (150) antenna are placed adjacent to the ceiling. The first antenna is concentric to the second antenna. A plasma source power supply (132) is coupled to the first and second antenna. The plasma source power supply generates a first RF power to the first antenna, and a second RF power to the second antenna. A substrate support disposed within the chamber. The size of the first antenna and a distance between the substrate support are such that the etch rate of the substrate on the substrate support is substantially uniform. |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY |
title | Methods to eliminate m-shape etch rate profile in inductively coupled plasma reactor |
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