Methods to eliminate m-shape etch rate profile in inductively coupled plasma reactor

Methods to eliminate m-shape etch rate profile in inductively coupled plasma reactor

An inductively-coupled plasma processing chamber (102) has a chamber with a ceiling (106). A first (148) and second (150) antenna are placed adjacent to the ceiling. The first antenna is concentric to the second antenna. A plasma source power supply (132) is coupled to the first and second antenna....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LEE, KYEONG-TAE, TODOROV, VALENTIN N, KIM, TAE WON, KHAN, ANISUL, DESHMUKH, SHASHANK, YUEN, STEPHEN
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:An inductively-coupled plasma processing chamber (102) has a chamber with a ceiling (106). A first (148) and second (150) antenna are placed adjacent to the ceiling. The first antenna is concentric to the second antenna. A plasma source power supply (132) is coupled to the first and second antenna. The plasma source power supply generates a first RF power to the first antenna, and a second RF power to the second antenna. A substrate support disposed within the chamber. The size of the first antenna and a distance between the substrate support are such that the etch rate of the substrate on the substrate support is substantially uniform.