LIGHT EMITTING DEVICE WITH A EU-COMPRISING PHOSPHOR MATERIAL

LIGHT EMITTING DEVICE WITH A EU-COMPRISING PHOSPHOR MATERIAL

A phosphor converted light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, the light emitting layer being configured to emit light having a first peak wavelength; a first phosphor configured to emit light hav...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: JUESTEL, THOMAS, UHLICH, DOMINIK, HUPPERTZ, PETRA, WIECHERT, DETLEF UWE
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A phosphor converted light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, the light emitting layer being configured to emit light having a first peak wavelength; a first phosphor configured to emit light having a second peak wavelength; and a second phosphor configured to emit light having a third peak wavelength. The second phosphor is an Eu3+-activated phosphor, configured such that in the excitation spectrum at 298K and 1.013 bar, a maximum intensity in a wavelength range between 460 nm and 470 nm is at least 5% of a maximum intensity in a wavelength range between 220 nm to 320 nm.