ELECTRONIC DEVICE WITH A MULTI-GATED ELECTRODE STRUCTURE AND A PROCESS FOR FORMING THE ELECTRONIC DEVICE
An electronic device including a multi-gate electrode structure overlying the channel region further comprising a first and second gate electrode spaced apart from each other by a layer, and a process for forming the electronic device is disclosed. The multi-gate electrode structure can have a sidew...
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| creator | CHINDALORE, GOWRISHANKAR L |
| description | An electronic device including a multi-gate electrode structure overlying the channel region further comprising a first and second gate electrode spaced apart from each other by a layer, and a process for forming the electronic device is disclosed. The multi-gate electrode structure can have a sidewall spacer structure having first and second portions. The first and second gate electrodes can have different conductivity types. The electronic device can also include a first gate electrode of a first conductivity type overlying the channel region, a second gate electrode of a second conductivity type lying between the first gate electrode and the channel region, and a first layer capable of storing charge lying between the first gate electrode and the substrate. |
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The multi-gate electrode structure can have a sidewall spacer structure having first and second portions. The first and second gate electrodes can have different conductivity types. 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| language | eng ; fre ; ger |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | ELECTRONIC DEVICE WITH A MULTI-GATED ELECTRODE STRUCTURE AND A PROCESS FOR FORMING THE ELECTRONIC DEVICE |
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