ELECTRONIC DEVICE WITH A MULTI-GATED ELECTRODE STRUCTURE AND A PROCESS FOR FORMING THE ELECTRONIC DEVICE

An electronic device including a multi-gate electrode structure overlying the channel region further comprising a first and second gate electrode spaced apart from each other by a layer, and a process for forming the electronic device is disclosed. The multi-gate electrode structure can have a sidewall spacer structure having first and second portions. The first and second gate electrodes can have different conductivity types. The electronic device can also include a first gate electrode of a first conductivity type overlying the channel region, a second gate electrode of a second conductivity type lying between the first gate electrode and the channel region, and a first layer capable of storing charge lying between the first gate electrode and the substrate.