OPTICALLY ACTIVE COMPOSITIONS AND COMBINATIONS OF SAME WITH INDIUM GALLIUM NITRIDE SEMICONDUCTORS

New combinations of semiconductor devices in conjunction with optically active materials are set forth herein. In particular, light emitting semiconductors fashioned as diodes from indium gallium nitride constructions are combined with high-performance optically active Langasite La 3 Ga 5 SiO 14 cry...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ABRAMOV, VLADIMIR, SEMENOVICH, SHISHOV, ALEXANDER, VALERIEVICH, SCHERBAKOV, NIKOLAY, VALENTINOVICH, SOCHIN, NAUM, PETROVICH
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES
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