OPTICALLY ACTIVE COMPOSITIONS AND COMBINATIONS OF SAME WITH INDIUM GALLIUM NITRIDE SEMICONDUCTORS

New combinations of semiconductor devices in conjunction with optically active materials are set forth herein. In particular, light emitting semiconductors fashioned as diodes from indium gallium nitride constructions are combined with high-performance optically active Langasite La 3 Ga 5 SiO 14 cry...

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Bibliographische Detailangaben
Hauptverfasser:	ABRAMOV, VLADIMIR, SEMENOVICH, SHISHOV, ALEXANDER, VALERIEVICH, SCHERBAKOV, NIKOLAY, VALENTINOVICH, SOCHIN, NAUM, PETROVICH
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	New combinations of semiconductor devices in conjunction with optically active materials are set forth herein. In particular, light emitting semiconductors fashioned as diodes from indium gallium nitride constructions are combined with high-performance optically active Langasite La 3 Ga 5 SiO 14 crystalline materials. When Langasite is properly doped, it will respond to the light output emissions of the diode by absorbing high energy photons therefrom and reemitting light of longer wavelengths. High-energy short wavelength light mixes with the longer wavelengths light to produce a broad spectrum which may be perceived by human observers as white light. Langasite, a relatively new material, enjoying great utility in frequency control and stabilization schemes has heretofore never been used in combination with optical emission systems.