Optical semiconductor device

In an optical semiconductor device that emits or receives light substantially perpendicularly to or in parallel to an active surface formed on a semiconductor substrate, the optical semiconductor device, an electrode (20) that is formed on the active surface side and connected to the active surface...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: WASHINO, RYU, SORIMACHI, SUSUMU, HAYAKAWA, SHIGENORI, OKAMOTO, KAORU, NAKAI, DAISUKE
Format: Patent
Sprache:eng ; fre ; ger
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Beschreibung
Zusammenfassung:In an optical semiconductor device that emits or receives light substantially perpendicularly to or in parallel to an active surface formed on a semiconductor substrate, the optical semiconductor device, an electrode (20) that is formed on the active surface side and connected to the active surface is stepped or tapered at an end of the electrode. The electrode of the optical semiconductor device is formed of three layers including an adhesive layer, a diffusion prevention layer, and an Au layer, and the stepped configuration or the taped configuration is formed by a difference of the thickness of the Au layer (20a) or the thickness of the adhesive layer/diffusion prevention layer/Au layer.