SINGLE LEVEL CELL PROGRAMMING IN A MULTIPLE LEVEL CELL NON-VOLATILE MEMORY DEVICE

SINGLE LEVEL CELL PROGRAMMING IN A MULTIPLE LEVEL CELL NON-VOLATILE MEMORY DEVICE

A multiple level cell memory array has an area that can be programmed as single level cells. The cells to be programmed are initially programmed with the desire data into either the least significant or most significant bit of the cell. A second programming operation the programs reinforcing data th...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: ROOHPARVAR, Frankie, F
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Zusammenfassung:A multiple level cell memory array has an area that can be programmed as single level cells. The cells to be programmed are initially programmed with the desire data into either the least significant or most significant bit of the cell. A second programming operation the programs reinforcing data that adjusts the threshold level of the cell to the appropriate level for the desired data.