Thin-film bulk acoustic ware resonator and method for performing heterogeneous integration of the same with complementary-metal-oxide-semiconductor integrated circuit

The present invention refers to a thin-film bulk acoustic wave resonator (FBAR) comprising: - a first metal electrode; - an acoustic layer; - a second metal electrode; - a carrier substrate; - two or more supporting posts, said supporting posts connecting said first metal electrode and said second metal electrode to said carrier substrate; said first metal electrode, said acoustic layer and said second metal electrode arranged in a three-dimensional, floating structure, being said structure supported and interconnected to said carrier substrate by means of said supporting posts; said first metal electrode interfacing in the vertical direction one of its surfaces withsaid acoustic layer and the second one with the air on top of said first metal electrode; said acoustic layer interfacing in the vertical direction one of its surfaces with said first metal electrode and the second one with said second metal electrode; said second metal electrode interfacing in the vertical direction one of its surfaces with said acoustic layer and the second one with the air cavity formed in between said first metal electrode and said carrier substrate.