Reading circuit and method for data storage system
Described herein is a reading circuit (10) for reading a datum stored in a storage material (34). In the reading circuit (10), a generating stage (3) generates a read electrical quantity (V r ) to be applied to the storage material (34), and a sensing stage (12) is configured to generate an output e...
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creator | ZUFFADA, MAURIZIO FEDELI, MICHELE ALBASINI, GUIDO INTROINI, MATTIA |
description | Described herein is a reading circuit (10) for reading a datum stored in a storage material (34). In the reading circuit (10), a generating stage (3) generates a read electrical quantity (V r ) to be applied to the storage material (34), and a sensing stage (12) is configured to generate an output electrical quantity (V out ) that is indicative of a charge variation (”Q) associated to the datum stored, and that occurs in the storage material (34) due to application of the read electrical quantity (V r ); in particular, the sensing stage uses a charge-sensing amplifier (12) electrically connected to the storage material (34). |
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In the reading circuit (10), a generating stage (3) generates a read electrical quantity (V r ) to be applied to the storage material (34), and a sensing stage (12) is configured to generate an output electrical quantity (V out ) that is indicative of a charge variation (”Q) associated to the datum stored, and that occurs in the storage material (34) due to application of the read electrical quantity (V r ); in particular, the sensing stage uses a charge-sensing amplifier (12) electrically connected to the storage material (34).</description><language>eng ; fre ; ger</language><subject>INFORMATION STORAGE ; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER ; PHYSICS ; STATIC STORES</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080716&DB=EPODOC&CC=EP&NR=1944763A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080716&DB=EPODOC&CC=EP&NR=1944763A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZUFFADA, MAURIZIO</creatorcontrib><creatorcontrib>FEDELI, MICHELE</creatorcontrib><creatorcontrib>ALBASINI, GUIDO</creatorcontrib><creatorcontrib>INTROINI, MATTIA</creatorcontrib><title>Reading circuit and method for data storage system</title><description>Described herein is a reading circuit (10) for reading a datum stored in a storage material (34). In the reading circuit (10), a generating stage (3) generates a read electrical quantity (V r ) to be applied to the storage material (34), and a sensing stage (12) is configured to generate an output electrical quantity (V out ) that is indicative of a charge variation (”Q) associated to the datum stored, and that occurs in the storage material (34) due to application of the read electrical quantity (V r ); in particular, the sensing stage uses a charge-sensing amplifier (12) electrically connected to the storage material (34).</description><subject>INFORMATION STORAGE</subject><subject>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAKSk1MycxLV0jOLEouzSxRSMxLUchNLcnIT1FIyy9SSEksSVQoLskvSkxPVSiuLC5JzeVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAYaWJibmZsaOhsZEKAEAWeYrgQ</recordid><startdate>20080716</startdate><enddate>20080716</enddate><creator>ZUFFADA, MAURIZIO</creator><creator>FEDELI, MICHELE</creator><creator>ALBASINI, GUIDO</creator><creator>INTROINI, MATTIA</creator><scope>EVB</scope></search><sort><creationdate>20080716</creationdate><title>Reading circuit and method for data storage system</title><author>ZUFFADA, MAURIZIO ; FEDELI, MICHELE ; ALBASINI, GUIDO ; INTROINI, MATTIA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP1944763A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2008</creationdate><topic>INFORMATION STORAGE</topic><topic>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>ZUFFADA, MAURIZIO</creatorcontrib><creatorcontrib>FEDELI, MICHELE</creatorcontrib><creatorcontrib>ALBASINI, GUIDO</creatorcontrib><creatorcontrib>INTROINI, MATTIA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZUFFADA, MAURIZIO</au><au>FEDELI, MICHELE</au><au>ALBASINI, GUIDO</au><au>INTROINI, MATTIA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Reading circuit and method for data storage system</title><date>2008-07-16</date><risdate>2008</risdate><abstract>Described herein is a reading circuit (10) for reading a datum stored in a storage material (34). In the reading circuit (10), a generating stage (3) generates a read electrical quantity (V r ) to be applied to the storage material (34), and a sensing stage (12) is configured to generate an output electrical quantity (V out ) that is indicative of a charge variation (”Q) associated to the datum stored, and that occurs in the storage material (34) due to application of the read electrical quantity (V r ); in particular, the sensing stage uses a charge-sensing amplifier (12) electrically connected to the storage material (34).</abstract><oa>free_for_read</oa></addata></record> |
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language | eng ; fre ; ger |
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subjects | INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER PHYSICS STATIC STORES |
title | Reading circuit and method for data storage system |
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