Reading circuit and method for data storage system
Described herein is a reading circuit (10) for reading a datum stored in a storage material (34). In the reading circuit (10), a generating stage (3) generates a read electrical quantity (V r ) to be applied to the storage material (34), and a sensing stage (12) is configured to generate an output e...
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | Described herein is a reading circuit (10) for reading a datum stored in a storage material (34). In the reading circuit (10), a generating stage (3) generates a read electrical quantity (V r ) to be applied to the storage material (34), and a sensing stage (12) is configured to generate an output electrical quantity (V out ) that is indicative of a charge variation (”Q) associated to the datum stored, and that occurs in the storage material (34) due to application of the read electrical quantity (V r ); in particular, the sensing stage uses a charge-sensing amplifier (12) electrically connected to the storage material (34). |
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