Thermal etch process for cleaning CVD chambers

Equipment surfaces in a semiconductor processing chamber are cleaned of undesired silicon nitride by flowing fluorine diluted in an inert gas through the chamber maintained at an elevated temperature of 230 °C to 565 °C to thermally disassociate the fluorine, thereby cleaning undesired silicon nitri...

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Bibliographische Detailangaben
Hauptverfasser:	RIDGEWAY ROBERT GORDON, JOHNSON, ANDREW DAVID, VORSA, VASIL, MAROULIS, PETER JAMES
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY CLEANING CLEANING IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	Equipment surfaces in a semiconductor processing chamber are cleaned of undesired silicon nitride by flowing fluorine diluted in an inert gas through the chamber maintained at an elevated temperature of 230 °C to 565 °C to thermally disassociate the fluorine, thereby cleaning undesired silicon nitride from the surfaces by chemical reaction of thermally disassociated fluorine in (b) with the undesired silicon nitride to form volatile reaction products; and removing the volatile reaction products from the chamber.