Low temperature aerosol deposition of a plasma resistive layer

Embodiments of the present invention provide a method for low temperature aerosol deposition of a plasma resistive layer on semiconductor chamber components/parts. In one embodiment, the method for low temperature aerosol deposition includes forming an aerosol of fine particles in an aerosol generat...

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Bibliographische Detailangaben
Hauptverfasser:	KATS, SEMYON L, SUN, JENNIFER Y, ZHU, XI, RYABOVA, ELMIRA, THACH, SENH
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Embodiments of the present invention provide a method for low temperature aerosol deposition of a plasma resistive layer on semiconductor chamber components/parts. In one embodiment, the method for low temperature aerosol deposition includes forming an aerosol of fine particles in an aerosol generator (110), dispensing the aerosol from the aerosol generator into a processing chamber (122) toward a surface of a substrate (132), maintaining the substrate temperature at between about 0 degrees Celsius and 50 degrees Celsius, and depositing a layer (202) from material in the aerosol on the substrate surface.