Integrated method for removal of halogen residues from etched substrates by thermal process

Integrated method for removal of halogen residues from etched substrates by thermal process

A method and system for removing volatile residues from a substrate are provided. In one embodiment, the volatile residues removal process is performed en-routed in the system while performing a halogen treatment process on the substrate. The volatile residues removal process is performed in the sys...

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Hauptverfasser: HOOGENSEN, BRETT CHRISTIAN, BAHNG, KENNETH J, DAVIS, MATTHEW FENTON, LILL, THORSTEN, KAWAGUCHI, MARK NAOSHI, LO, KIN PONG, WEN, SANDY M, KIM, STEVEN H
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method and system for removing volatile residues from a substrate are provided. In one embodiment, the volatile residues removal process is performed en-routed in the system while performing a halogen treatment process on the substrate. The volatile residues removal process is performed in the system other than the halogen treatment processing chamber and a FOUP. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a vacuum tight platform, processing a substrate in a processing chamber of the platform with a chemistry comprising halogen, and treating the processed substrate in the platform to release volatile residues from the treated substrate.