REPLACEMENT GATE FIELD EFFECT TRANSISTOR WITH GERMANIUM OR SIGE CHANNEL AND MANUFACTURING METHOD FOR SAME USING GAS-CLUSTER ION IRRADIATION

REPLACEMENT GATE FIELD EFFECT TRANSISTOR WITH GERMANIUM OR SIGE CHANNEL AND MANUFACTURING METHOD FOR SAME USING GAS-CLUSTER ION IRRADIATION

A self-aligned MISFET transistor ( 500 H) on a silicon substrate ( 502 ), but having a graded SiGe channel or a Ge channel. The channel ( 526 ) is formed using gas-cluster ion beam ( 524 ) irradiation and provides higher channel mobility than conventional silicon channel MISFETs. A manufacturing met...

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Bibliographische Detailangaben
Hauptverfasser: BORLAND, JOHN O, SKINNER, WESLEY J
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A self-aligned MISFET transistor ( 500 H) on a silicon substrate ( 502 ), but having a graded SiGe channel or a Ge channel. The channel ( 526 ) is formed using gas-cluster ion beam ( 524 ) irradiation and provides higher channel mobility than conventional silicon channel MISFETs. A manufacturing method for such a transistor is based on a replacement gate process flow augmented with a gas-cluster ion beam processing step or steps to form the SiGe or Ge channel. The channel may also be doped by gas-cluster ion beam processing either as an auxiliary step or simultaneously with formation of the increased mobility channel.