Surface finishing of SOI substrates using an EPI process

A method for finishing substrates. The method comprises providing a substrate having a cleaved surface which has a first surface roughness value, performing a hydrogen treatment to increase the hydrogen concentration of the cleaved surface, and performing an etchant and thermal treatment. The etchan...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MALIK, IGOR J, KANG, SIEN G
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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