Surface finishing of SOI substrates using an EPI process

A method for finishing substrates. The method comprises providing a substrate having a cleaved surface which has a first surface roughness value, performing a hydrogen treatment to increase the hydrogen concentration of the cleaved surface, and performing an etchant and thermal treatment. The etchan...

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Bibliographische Detailangaben
Hauptverfasser: MALIK, IGOR J, KANG, SIEN G
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:A method for finishing substrates. The method comprises providing a substrate having a cleaved surface which has a first surface roughness value, performing a hydrogen treatment to increase the hydrogen concentration of the cleaved surface, and performing an etchant and thermal treatment. The etchant and thermal treatment comprises increasing a temperature of a hydrogen bearing environment to greater than about 1,000° Celsius and subjecting the cleaved surface to the environment to reduce the surface roughness value by at least eighty percent. The hydrogen bearing environment includes an HCI gas and a hydrogen gas. The cleaved surface after treatment is substantially smooth.