Thin film semiconductor device and manufacturing method

The device includes several p-channel and n-channel thin film transistors (TFTs) which are formed on a polycrystalline silicon film (3) of a glass substrate (1). The TFTs of same channel types have threshold voltages different from one another. The TFTs of different channel types have same dopant of...

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Bibliographische Detailangaben
Hauptverfasser:	SERA, KENJI, TSUCHI, HIROSHI
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AMPLIFIERS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING INFORMATION STORAGE NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS PULSE TECHNIQUE SEMICONDUCTOR DEVICES STATIC STORES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	The device includes several p-channel and n-channel thin film transistors (TFTs) which are formed on a polycrystalline silicon film (3) of a glass substrate (1). The TFTs of same channel types have threshold voltages different from one another. The TFTs of different channel types have same dopant of appropriate dose introduced into respective channel regions. Independent claims are also included for the following: (1) display device; (2) thin-film semiconductor device manufacturing method; and (3) differential amplifier circuit.