SEVENTY FIVE MILLIMETER SILICON CARBIDE WAFER WITH LOW WARP, BOW, AND TTV

SEVENTY FIVE MILLIMETER SILICON CARBIDE WAFER WITH LOW WARP, BOW, AND TTV

A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches, a warp of less than about 5 mum, a bow less than about 5 mum, and a total thickness variation of less than about 2.0 mum.

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Bibliographische Detailangaben
Hauptverfasser: LAUGHNER, Michael, Paul, POWELL, Adrian, LEONARD, Robert, Tyler, BRIXIUS, William, H, MCCLURE, Davis
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches, a warp of less than about 5 mum, a bow less than about 5 mum, and a total thickness variation of less than about 2.0 mum.