Method for determining the electrically active dopant density profile in ultra-shallow junction (USJ) structures

In a method of determining that a semiconductor wafer or sample has a desirable density of electrically active dopant, minimum and maximum capacitances associated with the semiconducting material forming the wafer or sample at a first point adjacent a topside thereof are determined and minimum and m...

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Bibliographische Detailangaben

1. Verfasser:	HILLARD, ROBERT J
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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