Method for determining the electrically active dopant density profile in ultra-shallow junction (USJ) structures

In a method of determining that a semiconductor wafer or sample has a desirable density of electrically active dopant, minimum and maximum capacitances associated with the semiconducting material forming the wafer or sample at a first point adjacent a topside thereof are determined and minimum and maximum capacitances associated with the semiconducting material forming the wafer or sample at a second point adjacent a beveled surface thereof that is defined by the removal of a portion of the topside thereabove are determined. As a function of the minimum and maximum capacitances determined at each point and the depth on or from the topside surface where each point resides, the electrically active dopant density of the semiconductor wafer or sample can be determined.