Composition and method for photoresist removal

A composition, for removal of multi-layer photoresist layers on an electronic device substrate for rework of the photoresist on the substrate, comprises; (i) at least one non-polymeric glycol ether solvent; (ii) at least one non-aromatic alcohol solvent; (iii) at least one solvent selected from an a...

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Bibliographische Detailangaben
Hauptverfasser:	MARSELLA, JOHN ANTHONY, WU, AIPING
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A composition, for removal of multi-layer photoresist layers on an electronic device substrate for rework of the photoresist on the substrate, comprises; (i) at least one non-polymeric glycol ether solvent; (ii) at least one non-aromatic alcohol solvent; (iii) at least one solvent selected from an aromatic alcohol and a glycol; (iv) at least one organic sulfonic acid; and (v) at least one corrosion inhibitor. The composition can be used to remove multi-layer photoresist at temperatures less than 65°C and in contact times under three minutes, allowing high throughput on single wafer tools.