SEMICONDUCTOR DEVICE WITH HETEROJUNCTIONS AND AN INTER-FINGER STRUCTURE

SEMICONDUCTOR DEVICE WITH HETEROJUNCTIONS AND AN INTER-FINGER STRUCTURE

The device has a doped amorphous semiconductor region (6) with one type of conductivity on a crystalline side (3) of a semiconductor substrate (1). The substrate has, on the same side (3), doped amorphous semiconductor regions (7a, 7b) with another type of conductivity, opposite to the former type o...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: RIBEYRON, Pierre Jean, JAUSSAUD, Claude
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The device has a doped amorphous semiconductor region (6) with one type of conductivity on a crystalline side (3) of a semiconductor substrate (1). The substrate has, on the same side (3), doped amorphous semiconductor regions (7a, 7b) with another type of conductivity, opposite to the former type of conductivity. The regions (6, 7a, 7b) form an interdigitated structure and are isolated from each other by dielectric regions (8a-8d). Independent claims are also included for the following: (A) a solar cell module comprising multiple solar cells (B) a method for producing a semiconductor device.