Photo diode having reduced dark current
A photo diode comprising a semiconductor body, a cathode and an anode being formed by highly doped p-regions and n-regions, a p-doped region connected to the anode and a n-doped region connected to the cathode with at least one pn junction oriented normally to the area of light incidence.
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| Hauptverfasser: | , , |
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | A photo diode comprising a semiconductor body, a cathode and an anode being formed by highly doped p-regions and n-regions, a p-doped region connected to the anode and a n-doped region connected to the cathode with at least one pn junction oriented normally to the area of light incidence. |
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