METHOD OF MODIFYING SURFACE AREA AND ELECTRONIC DEVICE

In the method a first layer, particularly of amorphous silicon, is deposited on the surface of a substrate with trenches. Part of this surface is covered with a protective layer. The first layer is thereafter maskless removed with a dry etching treatment on the substrate surface while it is kept wit...

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Bibliographische Detailangaben
Hauptverfasser:	KLOOTWIJK, JOHAN, H, ROOZEBOOM, FREDDY, KEMMEREN, ANTONIUS, L., A., M, WOLTERS, ROBERTUS, A., M
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	In the method a first layer, particularly of amorphous silicon, is deposited on the surface of a substrate with trenches. Part of this surface is covered with a protective layer. The first layer is thereafter maskless removed with a dry etching treatment on the substrate surface while it is kept within the trench.