Thermal isolation of phase change memory cells
A memory includes an array of resistive memory cells, bit lines (112) between rows of the memory cells (104) for accessing the memory cells, and a conductive plate (115) coupled to each of the memory cells.
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; fre ; ger |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | A memory includes an array of resistive memory cells, bit lines (112) between rows of the memory cells (104) for accessing the memory cells, and a conductive plate (115) coupled to each of the memory cells. |
|---|