Method for manipulating state machine storage in a small memory space

A method includes configuring a flash memory device (11) including a first memory sector (41) having a primary memory sector correspondence, a second memory sector (41') having an alternate memory sector correspondence, and a third memory sector (41 ") having a free memory sector correspon...

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Bibliographische Detailangaben
Hauptverfasser: Kirschner, Wesley, A, Day, Richard, C, Pauly, Steven, J, Hurd, John, A, Jacobson, Gary, S, Athens, G., Thomas
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:A method includes configuring a flash memory device (11) including a first memory sector (41) having a primary memory sector correspondence, a second memory sector (41') having an alternate memory sector correspondence, and a third memory sector (41 ") having a free memory sector correspondence, copying a portion of the primary memory sector to the free memory sector, erasing the primary memory sector, and changing a correspondence of each of the first memory sector, the second memory sector, and the third memory sector.