Multilayer device and method of manufacturing the same
A multilayer structure (10) which comprises a first metal conductor (12), a dielectric (14) provided on the first conductor, and an intermediate region (16) positioned between the first conductor (12) and the dielectric (14). The intermediate region is obtained by a thermal process and corresponds t...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | A multilayer structure (10) which comprises a first metal conductor (12), a dielectric (14) provided on the first conductor, and an intermediate region (16) positioned between the first conductor (12) and the dielectric (14). The intermediate region is obtained by a thermal process and corresponds to an additive element different from the element of the first conductor and the dielectric. The additive is mixed with the first conductor and forms with the conductor and the dielectric an intermediate region (16). The additive contains at least one element selected from the group consisting of Si, Al, P, Mg, Mn, Y, V, Mo, Co, Nb, Fe, and Gr, or an oxide of these elements. |
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