PRODUCTION OF A GAS-TIGHT, CRYSTALLINE MULLITE LAYER BY USING A THERMAL SPRAYING METHOD
The invention relates to a method for producing a tight crystalline mullite layer on a metallic and/or ceramic substrate by using the plasma spraying technique. To this end, a sol containing mullite precursors with a proportion of 2 to 25% by weight with regard to the oxides (3 Al2O3/2 SiO2) is used...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | The invention relates to a method for producing a tight crystalline mullite layer on a metallic and/or ceramic substrate by using the plasma spraying technique. To this end, a sol containing mullite precursors with a proportion of 2 to 25% by weight with regard to the oxides (3 Al2O3/2 SiO2) is used as a spraying additive. This method is carried out under atmospheric conditions, and the sol is injected with a focussed jet and with an overpressure of at least one I bar into the plasma flame. An additional compacting of the layer can be advantageously effected by repeatedly passing over the layer with the plasma flame. The method is particularly suited for applying a gas-tight crystalline mullite layer to a steel substrate. |
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