ATOMIC LAYER DEPOSITION OF COPPER USING SURFACE-ACTIVATING AGENTS

The present invention relates to a novel atomic layer deposition process for the formation of copper films on substrates or in or on porous solids in an atomic layer deposition process.

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: THOMPSON, JEFFREY, SCOTT
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The present invention relates to a novel atomic layer deposition process for the formation of copper films on substrates or in or on porous solids in an atomic layer deposition process.