ATOMIC LAYER DEPOSITION OF COPPER USING SURFACE-ACTIVATING AGENTS
The present invention relates to a novel atomic layer deposition process for the formation of copper films on substrates or in or on porous solids in an atomic layer deposition process.
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng ; fre ; ger |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The present invention relates to a novel atomic layer deposition process for the formation of copper films on substrates or in or on porous solids in an atomic layer deposition process. |
---|