Method of manufacturing a semiconductor device

The present invention is related to a method of producing a semiconductor device and the resulting device. The method is suitable in the first place for producing high power devices, such as High Electron Mobility Transistors (HEMT), in particular HEMT-devices with multiplies source-gate-drain group...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	DAS, JOHAN, RUYTHOOREN, WOUTER
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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