Method of manufacturing a semiconductor device

The present invention is related to a method of producing a semiconductor device and the resulting device. The method is suitable in the first place for producing high power devices, such as High Electron Mobility Transistors (HEMT), in particular HEMT-devices with multiplies source-gate-drain groups or multiple base bipolar transistors. According to the method, the interconnect between the source contacts is not produced by air bridge structures, but by applying a contract layer (13) to the backside of the device, after attaching the front side of a first carrier substrate (1) to a second substrate (9). According to a further embodiment, the second substrate (9) can be further attached to a third, in which case a more efficient heat removal becomes possible.