Process for controlling a glow discharge plasma nitriding process and system using the same

The control of a plasma assisted nitriding process includes optical emission spectroscopy measurement of the emissions from two reactive and emissive species in the discharge plasma to provide two analogue signals (D1i, D2i); treating these signals to obtain a parameter (Xi) and comparing this with...

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Bibliographische Detailangaben
Hauptverfasser:	GRUSHIN, MIHAIL, SMOLIK, JERZY, WALKOWICZ, JAN, SUPIOT, PHILIPPE, PRZYBYLSKI, JAN, BRUDNIAS, RAFAL
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING METALLURGY PHYSICS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TESTING
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Beschreibung
Zusammenfassung:	The control of a plasma assisted nitriding process includes optical emission spectroscopy measurement of the emissions from two reactive and emissive species in the discharge plasma to provide two analogue signals (D1i, D2i); treating these signals to obtain a parameter (Xi) and comparing this with a reference value (Xr); adjusting, if necessary, the flow rate of at least one of the gaseous constituents and/or the pressure of the gas mixture to maintain the parameter close to the reference value for the whole duration of the nitriding process. An independent claim is also claimed for a system for controlling a nitriding system.