Group IV based semiconductor light emitting device with improved carrier confinement and method of fabricating the same

In one aspect, a semiconductor device (10) includes a p-region (12) and an n-region (14). The p-region (12) includes a first Group IV semiconductor that has a bandgap and is doped with a p-type dopant, and a first region (18) of local crystal modifications inducing localized strain that increases th...

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Hauptverfasser:	RANKIN, GLENN H, BAHL, SANDEEP R
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	RANKIN, GLENN H BAHL, SANDEEP R
description	In one aspect, a semiconductor device (10) includes a p-region (12) and an n-region (14). The p-region (12) includes a first Group IV semiconductor that has a bandgap and is doped with a p-type dopant, and a first region (18) of local crystal modifications inducing localized strain that increases the bandgap of the first Group IV semiconductor and creates a conduction band energy barrier against transport of electrons across the p-region (12). The n-region (14) includes a second Group IV semiconductor that has a bandgap and is doped with an n-type dopant, and a second region (20) of local crystal modifications inducing localized strain that increases the bandgap of the second Group IV semiconductor and creates a valence band energy barrier against transport of holes across the n-region (14).
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Group IV based semiconductor light emitting device with improved carrier confinement and method of fabricating the same
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