Group IV based semiconductor light emitting device with improved carrier confinement and method of fabricating the same

In one aspect, a semiconductor device (10) includes a p-region (12) and an n-region (14). The p-region (12) includes a first Group IV semiconductor that has a bandgap and is doped with a p-type dopant, and a first region (18) of local crystal modifications inducing localized strain that increases the bandgap of the first Group IV semiconductor and creates a conduction band energy barrier against transport of electrons across the p-region (12). The n-region (14) includes a second Group IV semiconductor that has a bandgap and is doped with an n-type dopant, and a second region (20) of local crystal modifications inducing localized strain that increases the bandgap of the second Group IV semiconductor and creates a valence band energy barrier against transport of holes across the n-region (14).